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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION With TO-126 package Complement to type 2SA715 APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute Maximun Ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage SEM E Open base Ta=25ae Open emitter OND IC TOR UC VALUE 35 35 5 2.5 3 0.75 UNIT V V V A A Open collector PC W TC=25ae 10 150 -55~150 ae ae Tj Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA IB=0 IC=1mA ;IE=0 IE=1mA; IC=0 IC=2.0A; IB=0.2A(Pulse test) IC=1.5A ; VCE=2V(Pulse test) VCB=35V; IE=0 VEB=3V; IC=0 IC=0.5A ; VCE=2V IC=1.5A ; VCE=2V(Pulse test) IC=0.2A ; VCE=2V(Pulse test) 60 MIN 35 35 5 1.0 1.5 20 1 |I |I TYP. MAX UNIT V V V V V A A SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT C Transition frequency hFE-1 Classifications B 60-120 HAN INC D 100-200 160-320 SEM GE OND IC 20 TOR UC 320 180 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 PACKAGE OUTLINE SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 4 |
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